http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. STT3962NE 2.3a , 60v , r ds(on) 0.153 ? n-channel enhancement mode mosfet elektronische bauelemente 4-aug-2011 rev. a page 1 of 2 rohs compliant product a suffix of -c specifies halogen and lead-free description these miniature surface mount mosfets utilize a hig h cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. features low r ds(on) provides higher efficiency and extends battery life low thermal impedance copper leadframe tsop-6 saves board space fast switching speed high performance trench technology application dc-dc converters and power management in portable and battery-powered products such as computers, pri nters, pcmcia cards, cellular and cordless telephones. package information package mpq leader size tsop-6 3k 7 inch absolute maximum ratings ( t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current 1 t a =25c i d 2.3 a t a =70c 1.9 pulsed drain current 2 i dm 8 a continuous source current (diode conduction) 1 i s 1.05 a power dissipation 1 t a =25c p d 1.15 w t a =70c 0.7 operating junction and storage temperature range tj, tstg -55~150 c thermal resistance rating maximum junction to ambient 1 t Q 10 sec r ja 100 c / w steady state 166 notes: 1. surface mounted on 1 x 1 fr4 board. 2. pulse width limited by maximum junction tempera ture. ref. millimeter ref. millimeter min. max. min. max. a 2.70 3.10 g 0 0.10 b 2.60 3.00 h 0.60 ref. c 1.40 1.80 j 0.12 ref. d 1.10 max. k 0 10 e 1.90 ref. l 0.95 ref. f 0.30 0.50 tsop-6 b l f h c j d g k a e 1 2 3 4 5 6 esd protection diode 2kv g1 s2 g 2 d1 s2 d2
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. STT3962NE 2.3a , 60v , r ds(on) 0.153 ? n-channel enhancement mode mosfet elektronische bauelemente 4-aug-2011 rev. a page 2 of 2 electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static gate-threshold voltage v gs(th) 1 - - v v ds =v gs , i d =250ua gate-body leakage current i gss - - 100 ua v ds =0, v gs =20v zero gate voltage drain current i dss - - 1 ua v ds =48v, v gs =0 - - 10 v ds =48v, v gs =0, t j =55 c on-state drain current 1 i d(on) 5 - - a v ds =5v, v gs =10v drain-source on-resistance 1 r ds(on) - - 0.153 v gs =10v, i d =2.3a - - 0.185 v gs =4.5v, i d =2.1a forward transconductance 1 g fs - 10 - s v ds =5v, i d =2.3a diode forward voltage 1 v sd - 0.8 - v i s =1.05a, v gs =0 dynamic 2 total gate charge q g - 3 - nc v ds =15v, v gs =4.5v, i d =2.3a gate-source charge q gs - 0.6 - gate-drain charge q gd - 1 - turn-on delay time t d(on) - 5 - ns v dd =15v, v gs =4.5v, r gen =15 , i d =1a rise time t r - 12 - turn-off delay time t d(off) - 13 - fall time t f - 7 - notes: 1. pulse test: pw Q 300us duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
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